Research on a Finger Vein Image Capturing Method and Its Apparatus Based on CMOS Imaging Device 基于CMOS成像器件的手指静脉图像采集方法及装置
A CMOS Vertically Integrated Device for Monochromatic Spectrum Detection 一种可用于单色光谱检测的CMOS层叠传感器
The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI. 使用MEDICI软件对Si-SiGe材料三维CMOS器件及Si-SiGe三维CMOS反相器的电学特性分别进行了模拟分析。
Research on SET/ CMOS Hybrid Device SET/CMOS混合器件研究
Measurement of X-ray relative dose-enhancement factor for CMOS device using bi-laminate structure and its simulation 双层膜结构测量CMOS器件X射线相对剂量增强因子及其理论模拟
Study of relative dose-enhancement effects on CMOS device irradiated by steady-state and transient pulsed X-rays 稳态、瞬态X射线辐照引起的互补性金属-氧化物-半导体器件剂量增强效应研究
Research on Short Aluminium-Gate CMOS Device and Process 短沟道铝栅CMOS器件及工艺研究
Scaling of CMOS device dimension has made great improvement in both integration and performance of integrated circuits. With the continuous decreasing of CMOS feature size, it has been possible to realize Gbps circuits in CMOS technology. CMOS工艺特征尺寸的日益减小使得集成电路在集成度和性能方面不断获得提高;随着CMOS工艺特征尺寸的不断缩减,已经有可能利用CMOS设计Gbps速率等级的电路。
Deep sub-micron CMOS device modeling and BSIM models 深亚微米CMOS器件建模与BSIM模型
The three-path latch-up window model is simply based on the analysis of CMOS device latch-up circuit model. 在分析CMOS器件闭锁电路模型的基础上,简要介绍了三径闭锁窗口模型的有关情况。
A New CMOS Negative Resistance Device 一种新的CMOS负阻器件
Theoretic Simulation for CMOS Device on Total Dose Radiation Response CMOS器件总剂量辐射响应理论模拟
By using knife edge as object, and CMOS sensor as device for image analyzing, we get edge spread function from the image and use differential operation and FFT to obtain modulation transfer function of the lens, then its image quality is known. 以刀口作为目标物,以CMOS作为图像分析器件,从图像中获取刀口函数,经微分和FFT运算,得到成像镜头的MTF(调制传递函数),从而得知其成像品质。
CMOS device dimensions scale down to the very deep submicrometer. ICs are going towards higher density, higher speed and lower power dissipation, making new challenges on IC test and design for test. CMOS器件进入超深亚微米阶段,集成电路(IC)继续向高集成度、高速度、低功耗发展,使得IC在测试和可测试性设计上都面临新的挑战。
A Long Cable Transmission On-Line Test System for CMOS Device in Total Dose Radiation CMOS器件总剂量效应长线传输在线测试系统
This paper introduces the architecture and implementation of double-computer system based on MultiBus-I bus. And it presents a method of exchange data through double-port RAM. Also it analyses the performance difference of CMOS and TTL device and the effect of capacitor load. 介绍了一种MultiBus-I总线的双机系统的结构和实现,提出了一种通过双口RAM进行数据交换的方法,并分析了CMOS与TTL器件之间的性能差异和容性负载对电路的影响。
The purpose of setting BIOS password is firstly to prevent any random alteration of CMOS device from strangers; 设置BIOS密码的目的一是防止别人擅自更改CMOS设置;
Total Dose Radiation Characteristics at Subthreshold Range of CMOS/ SOS Device CMOS/SOS器件亚阈区的总剂量电离辐照特性
Study of Total Dose Radiation on CMOS/ SIMOX Device CMOS/SIMOX器件总剂量辐照的研究
Theoretical Analysis and Computer Calculation of the Equivalent Dose of p,γ, β Irradiation Damages on CMOS Electronic Device CMOS器件p、γ、β辐照损伤等效剂量分析计算
In this paper the MTF system, using a new counting method and CMOS sensor as device for image reception, is discussed in detail. 本文详细讨论了一种采用全新计算方法,并以CMOS为图像接收器件的调制传递函数测量系统。
Self-Aligned Epitaxial CoSi_2 Contact on Source and Drain Regions for CMOS Device Technology 自对准外延CoSi2源漏接触CMOS器件技术
Experimental study of CMOS device of secondary package with electron irradiation 二次包封CMOS器件电子辐照实验研究
The physical model of p ( proton),γ,β irradiation damages ( including the concentrations of electron hole pair and displaced atom) on CMOS electronic device has been established. 建立了CMOS电子元器件中质子、电子和光子辐照损伤(电子空穴对和离位原子浓度)计算模型。
When scaled down to the ultra deep sub-micron field, the traditional CMOS device encounters serious challenges in device physics and fabrication technologies. 进入超深亚微米领域以后,传统CMOS器件遇到了器件物理、工艺技术等方面难以逾越的障碍。
This is because all factors which affect CMOS device 1/ f noise are distributed in the gate oxide-silicon interface nearby. 这是因为所有影响CMOS器件1/f噪声的因素都分布在栅氧化层-硅界面附近。
The programming-bit consists of two anti-fuse and one select CMOS device, it can provide high and low voltage levels to control the status of the certain nodes in the circuits, and the resistance character of anti-fuse itself can be completely ignored. 该编程位元由两个反熔丝和一个选择管构成,能输出稳定的高低电平控制可编程逻辑核中的电路节点状态,而与反熔丝本身的电阻特性无关。
Firstly, based on the CMOS device structure and factors affecting the MOSFET threshold voltage, the expression for MOSFET threshold voltage is concluded and then theoretically analyzed. 首先基于CMOS器件结构和影响MOSFET阈值电压的因素,分析总结出MOSFET阈值电压的表达式。
The CMOS inverters are normally chosen in digital circuit devices and it is the foundation of CMOS digital circuit analysis and design. So, the study of microwave interference effects on CMOS digital circuit-level device are mostly concentrated in CMOS inverter. 在CMOS数字电路器件中,最典型的基本单元门电路为反相器,它是CMOS数字电路分析设计的基础,因此CMOS数字器件电路级微波扰乱效应研究大多集中在CMOS反相器。